An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it suitable for high-density electronics. Using a scandium-doped aluminum nitride film as the ferroelectric layer, the team achieved high remanent polarization even at reduced thicknesses. This breakthrough demonstrates good compatibility with semiconductor devices combining logic circuits and memory, paving the way for compact and efficient on-chip memory for future technologies.
New ultrathin ferroelectric capacitors show promise for compact memory devices
